#1652387
Fótacatóidí leathsheoltacha “comhdhúil III/V” (e.g. GaAs nó GaInAs) agus fótacatóidí leictreon aistrithe;
“III/V compound” semiconductor (e.g. GaAs or GaInAs) photocathodes and transferred electron photocathodes;
Scag na torthaí
Bailiúcháin
29 toradh in 7 ndoiciméad
#1753193
b.Fótacatóidí arsainíde gailliam (GaAs) nó fótacatóidí arsainíde gailliam-indiam (GaInAs);
or GaInAs photocathodes;
#1753201
3.Fótacatóidí leathsheoltacha “comhdhúil III/V” (e.g. GaAs nó GaInAs) agus fótacatóidí leictreon aistrithe;
3."III/V compound" semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes;
#2057562
Fótacatóidí leathsheoltóra ‘chomhdhúil III/V’ (e.g. GaAs nó GaInAs) agus fótacatóidí leictreoin aistrithe;
"III/V compound" semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes;
#2275265
Fótacatóidí leathsheoltóra ‘chomhdhúil III/V’ (e.g. GaAs nó GaInAs) agus fótacatóidí leictreoin aistrithe;
"III/V compound" semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes;
#2699097
Fótacatóidí leathsheoltóra ‘chomhdhúil III/V’ (e.g. GaAs nó GaInAs) agus fótacatóidí leictreoin aistrithe;
"III/V compound" semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes;
#2824203
Fótacatóidí leathsheoltóra ‘chomhdhúil III/V’ (e.g. GaAs nó GaInAs) agus fótacatóidí leictreoin aistrithe;
"III/V compound" semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes;
#3117822
Fótacatóid GaAs nó GaInAs;
A GaAs or GaInAs photocathode;
#1652384
b. Fótacatóidí arsainíde gailliam (GaAs) nó fótacatóidí arsainíde gailliam-indiam (GaInAs);
b. GaAs or GaInAs photocathodes;
#1653870
Fótacatóidí leathsheoltacha “comhdhúil III/V” (e.g. GaAs nó GaInAs) agus fótacatóidí leictreon aistrithe, a bhfuil íogaireacht uasta radanta acu ar mó í ná 15 mA/W;
“III/V compound” semiconductor (e.g. GaAs or GaInAs) photocathodes and transferred electron photocathodes, having a maximum “radiant sensitivity” exceeding 15 mA/W;
#1655238
Ní rialaítear le 6A002.c. trealamh mar a leanas, nuair atá fótacatóidí seachas GaAs nó GaInAs á n-ionchorprú leis:
6A002.c. does not control equipment as follows, when incorporating other than GaAs or GaInAs photocathodes:
#1749996
Nóta:Ní rialaítear le 6A002.c. an trealamh seo a leanas, i gcás gur trealamh é ina nionchorpraítear fótacatóidí eile seachas fótacatóidí GaAs nó GaInAs:
Note:6A002.c. does not control equipment as follows, when incorporating other than GaAs or GaInAs photocathodes:
#1753197
3.Fótacatóidí leathsheoltacha “comhdhúil III/V” (e.g. GaAs nó GaInAs) agus fótacatóidí leictreon aistrithe, a bhfuil “íogaireacht radanta” uasta acu ar mó í ná 15 mA/W;
3."III/V compound" semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes, having a maximum "radiant sensitivity" exceeding 15 mA/W;
#2057554
b. Fótacatóidí um arsainíd ghailliam (GaAs) nó fótacatóidí um arsainíd ghailliam-indiam (GaInAs); nó
b. GaAs or GaInAs photocathodes; or
#2057558
Fótacatóidí leathsheoltacha ‘chomhdhúil III/V’ (e.g. GaAs nó GaInAs) agus fótacatóidí leictreoin aistrithe, a bhfuil ‘íogaireacht radanta’ uasta acu ar mó í ná 15 mA/W;
"III/V compound" semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes, having a maximum "radiant sensitivity" exceeding 15 mA/W;
#2057619
Ní rialaítear le 6A002.c. trealamh mar a leanas, nuair atá fótacatóidí seachas GaAs nó GaInAs á n-ionchorprú leis:
6A002.c. does not control equipment as follows, when incorporating other than GaAs or GaInAs photocathodes:
#2275257
b. Fótacatóidí um arsainíd ghailliam (GaAs) nó fótacatóidí um arsainíd ghailliam-indiam (GaInAs); nó
b. GaAs or GaInAs photocathodes; or
#2275261
Fótacatóidí leathsheoltacha ‘chomhdhúil III/V’ (e.g. GaAs nó GaInAs) agus fótacatóidí leictreoin aistrithe, a bhfuil ‘íogaireacht radanta’ uasta acu ar mó í ná 15 mA/W;
"III/V compound" semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes, having a maximum "radiant sensitivity" exceeding 15 mA/W;
#2275323
Ní rialaítear le 6A002.c. trealamh mar a leanas, nuair atá fótacatóidí seachas GaAs nó GaInAs á n-ionchorprú leis:
6A002.c. does not control equipment as follows, when incorporating other than GaAs or GaInAs photocathodes:
#2699089
b. Fótacatóidí um arsainíd ghailliam (GaAs) nó fótacatóidí um arsainíd ghailliam-indiam (GaInAs); nó
b. GaAs or GaInAs photocathodes; or
#2699093
Fótacatóidí leathsheoltacha ‘chomhdhúil III/V’ (e.g. GaAs nó GaInAs) agus fótacatóidí leictreoin aistrithe, a bhfuil ‘íogaireacht radanta’ uasta acu ar mó í ná 15 mA/W;
"III/V compound" semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes, having a maximum "radiant sensitivity" exceeding 15 mA/W;
#2699155
Ní rialaítear le 6A002.c. trealamh mar a leanas, nuair atá fótacatóidí seachas GaAs nó GaInAs á n-ionchorprú leis:
6A002.c. does not control equipment as follows, when incorporating other than GaAs or GaInAs photocathodes:
#2824195
b. Fótacatóidí um arsainíd ghailliam (GaAs) nó fótacatóidí um arsainíd ghailliam-indiam (GaInAs); nó
b. GaAs or GaInAs photocathodes; or
#2824199
Fótacatóidí leathsheoltacha ‘chomhdhúil III/V’ (e.g. GaAs nó GaInAs) agus fótacatóidí leictreoin aistrithe, a bhfuil ‘íogaireacht radanta’ uasta acu ar mó í ná 15 mA/W;
"III/V compound" semiconductor (e.g., GaAs or GaInAs) photocathodes and transferred electron photocathodes, having a maximum "radiant sensitivity" exceeding 15 mA/W;
#2824261
Ní rialaítear le 6A002.c. trealamh mar a leanas, nuair atá fótacatóidí seachas GaAs nó GaInAs á n-ionchorprú leis:
6A002.c. does not control equipment as follows, when incorporating other than GaAs or GaInAs photocathodes:
#2056912
Ní rialaítear le 3C001.d. ‘foshraith’ ag a bhfuil ceann amháin nó níos mó de chisil eipealuadracha P-chineáil de Gan, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP nó InGaAlP, neamhspleách ar sheicheamh na ndúl, ach amháin más rud é go bhfuil an ciseal eipealuadrach P-chineálach idir cisil N-chineálacha.
3C001.d. does not control a "substrate" having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers.
#2274627
Ní rialaítear le 3C001.d. ‘foshraith’ ag a bhfuil ceann amháin nó níos mó de chisil eipealuadracha P-chineáil de Gan, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP nó InGaAlP, neamhspleách ar sheicheamh na ndúl, ach amháin más rud é go bhfuil an ciseal eipealuadrach P-chineálach idir cisil N-chineálacha.
3C001.d. does not control a "substrate" having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers.
#2698454
Ní rialaítear le 3C001.d. ‘foshraith’ ag a bhfuil ceann amháin nó níos mó de chisil eipealuadracha P-chineáil de Gan, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP nó InGaAlP, neamhspleách ar sheicheamh na ndúl, ach amháin más rud é go bhfuil an ciseal eipealuadrach P-chineálach idir cisil N-chineálacha.
3C001.d. does not control a "substrate" having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers.
#2823561
Ní rialaítear le 3C001.d. ‘foshraith’ ag a bhfuil ceann amháin nó níos mó de chisil eipealuadracha P-chineáil de Gan, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP nó InGaAlP, neamhspleách ar sheicheamh na ndúl, ach amháin más rud é go bhfuil an ciseal eipealuadrach P-chineálach idir cisil N-chineálacha.
3C001.d. does not control a "substrate" having one or more P-type epitaxial layers of GaN, InGaN, AlGaN, InAlN, InAlGaN, GaP, GaAs, AlGaAs, InP, InGaP, AlInP or InGaAlP, independent of the sequence of the elements, except if the P-type epitaxial layer is between N-type layers.