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  1. PRODUCTION, TECHNOLOGY AND RESEARCH · SCIENCE|natural and applied sciences|physical sciences|electronics · INDUSTRY|electronics and electrical engineering|electronics industry|electronic component

    #686937

    IATE #3627349
    FD-SOI-Technologie
    de
    Sainmhíniú "Planarprozess, bei dem das Ausgangssilizium mit einer sehr dünnen Oxidisolatorschicht überzogen wird, auf der eine weitere sehr dünne Siliziumschicht angebracht wird, die den Transistorkanal bildet" Tagairt Council-DE in Anlehnung an Council-EN
    fully depleted silicon-on-insulator | fully depleted SOI | FDSOI | FD-SOI
    en
    Sainmhíniú "planar process technology in which the base silicon is covered by an ultra-thin layer of buried oxide insulator, which is covered by another, very thin silicon film on top that forms the transistor channel; because the transistor channel layer is very thin, there is no need to dope the channel, making the transistor fully depleted" Tagairt "Council-Terminology Coordination and Council-EN based on:- STMicroelectronics > Innovation & Technology > FD-SOI (20.4.2023)- anysilicon > The Ultimate Guide: FDSOI (20.4.2023)"
    Nóta "See also 'silicon-on-insulator'.'Fully-Depleted' refers to the fact that the transistor is fully depleted, while 'Silicon-on-Insulator' refers to the ultra-thin layer of film on top of the insulator."
    technologie «silicium sur isolant totalement déserté» | technologie FD-SOI | FD-SOI | silicium sur isolant totalement déserté
    fr
    Sainmhíniú technologie qui consiste à ajouter une couche ultra-mince d’oxyde de silicium isolant à l’architecture classique des transistors, ce qui confère aux transistors un fonctionnement performant et économe en énergie tout en poursuivant le défi de la miniaturisation Tagairt "Conseil-FR, d'après:- Site du CEA, Le transistor FDSOI (24.4.2023)- Office québécois de la langue française, Grand dictionnaire terminologique, Silicium sur isolant totalement appauvri (24.4.2023)"